cystech electronics corp. spec. no. : c396q8 issued date : 2009.04.29 revised date : page no. : 1/6 MTB20N03Q8 cystek product specification n-channel logic level enhancement mode power mosfet MTB20N03Q8 bv dss 30 v i d 8a description r dson (max) 20m the MTB20N03Q8 is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applicati ons such as dc/dc converters. features ? single drive requirement ? low on-resistance ? fast switching characteristic ? dynamic dv/dt rating ? repetitive avalanche rated ? uis, rg 100% tested ? pb-free & halogen-free package symbol outline MTB20N03Q8 sop-8 g gate pin 1 d drain s source
cystech electronics corp. spec. no. : c396q8 issued date : 2009.04.29 revised date : page no. : 2/6 MTB20N03Q8 cystek product specification absolute maximum ratings (tc=25 c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current @ t c =25 c i d 8 continuous drain current @ t c =100c i d 6 pulsed drain current i dm 32 *1 avalanche current i as 8 a avalanche energy @ l=0.1mh, i d =8a, r g =25 e as 3.2 repetitive avalanche energy @ l=0.05mh e ar 1.6 *2 mj t a =25 c 3 total power dissipation t a =100 c p d 1.5 w operating junction and storage temperature tj, tstg -55~+175 c note : *1 . pulse width limited by maximum junction temperature *2. duty cycle 1% thermal data parameter symbol value unit thermal resistance, junction-to-case r th,j-c 25 c/w thermal resistance, junction-to-ambient (note) r th,j-a 50 c/w note : 50c / w when mounted on a 1 in 2 pad of 2 oz copper. characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0, i d =250 a v gs(th) 1.0 1.5 3.0 v v ds = v gs , i d =250 a g fs - 16 - s v ds =5v, i d =8a i gss - - 100 na v gs = 20 - - 1 a v ds =24v, v gs =0 i dss - - 25 a v ds =20v, v gs =0, tj=125 c *i d(on) 8 - - a v ds =10v, v gs =10v - 15.5 20 m v gs =10v, i d =8a *r ds(on) - 23 31 m v gs =5v, i d =6a dynamic qg (v gs =10v) *1, 2 - 11 - qg (v gs =5v) *1, 2 - 6 qgs *1, 2 - 1.2 - qgd *1, 2 - 3.3 - nc i d =8a, v ds =15v, v gs =10v ciss - 1115 - coss - 116 - crss - 82 - pf v gs =0v, v ds =15v, f=1mhz rg - 2 - v gs =15mv, v ds =0v, f=1mhz
cystech electronics corp. spec. no. : c396q8 issued date : 2009.04.29 revised date : page no. : 3/6 MTB20N03Q8 cystek product specification characteristics (cont. t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions dynamic t d(on) *1, 2 - 11 - tr *1, 2 - 16 - t d(off) *1, 2 - 36 - t f *1, 2 - 20 - ns v ds =15v, i d =1a, v gs =10v, r g =6 source-drain diode ratings and characteristics i s *1 - - 2.3 i sm *3 - - 9.2 a v sd *1 - - 1.2 v i f =i s , v gs =0v trr - 50 - ns qrr - 2 - nc i f =i s , di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. ordering information device package shipping marking MTB20N03Q8 sop-8 (rohs compliant & halogen-free package) 3000 pcs / tape & reel b20n03
cystech electronics corp. spec. no. : c396q8 issued date : 2009.04.29 revised date : page no. : 4/6 MTB20N03Q8 cystek product specification characteristic curves v - drain source voltage(v) i - drain current(a) 0 0 d 10 ds 12 6v 20 30 7v 5v 3.5v 3 4 4v 5 4.5v on-region charact erist ics 5 15 25 v = 10v gs 4.5 v i - drain current(a) r -normalized drain-source on-resistance 1.6 0.8 0 ds(on) 1.2 1.0 1.4 6 d 12 gs v = 3.5 v 2.2 1.8 2.0 2.4 4.0 v 18 24 7.0 v 6.0 v 5.0 v 10 v 30 on-resistance variation with drain current and gate voltage on-resist ance variat ion wit h temperat ure r - normalized drain-source on-resistance ds(on) t - junction temperature ( c) 0.4 -50 0.7 1.0 0 j -25 25 d i = 8a v = 10v 1.3 1.6 1.9 gs 125 50 75 100 150 on-resi stance variation with gate-to-source voltage t = 125 c v - gat e-sour ce volt age( v ) 0.01 2 ds(on) 0.02 0.04 0.03 gs 4 6 t = 25 c a a 0.08 0.06 0.05 0.07 0.09 81 0 i = 8 a d r - on-resist ance( ) body diode forward voltage variation with source current and temperature 25 c t = 125 c v - body diode forward voltage( v ) is - reverse drain current( a ) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 a gs 1.0 0.8 1.2 -55 c 1.4 t = -55 c v - gat e-sour ce vol t age( v ) i - drain current(a) 1 d 5 0 10 2.0 1.5 gs v = 10v 20 15 25 30 ds a 3.0 2.5 3.5 25 c 125 c transfer charact erist ics
cystech electronics corp. spec. no. : c396q8 issued date : 2009.04.29 revised date : page no. : 5/6 MTB20N03Q8 cystek product specification characteristic curves(cont.) q - gate charge( nc ) v - gat e-sour ce vol t age( v ) gs 0 0 2 4 g 48 i = 8a 6 8 10 d 12 16 gat e charge charact erist ics 15v 10v v = 5v ds v - dr ai n-sour ce vol t age( v ) ca p a c i t a n c e ( p f ) 0 0 ds 5 10 15 20 gs f = 1mhz v = 0 v ca p a c i t a n c e ch a r a c t e r i st i c s 25 30 150 300 450 600 750 900 1500 1200 1350 1050 ci ss co ss cr ss dc v - dr ai n-sour ce vol t age( v ) maximum safe operating area i - drain current( a ) v = 10v si n g l e pu l se r = 125 c/ w t = 25 c 0.1 0.01 d 0.1 ds 1 ja a gs r limit 1 10 100 ds(on) 10s 10 100 100 s 10ms 100ms 1s 1ms p( pk ),peak transient power( w ) 20 0 10 30 40 50 si n g l e pu l se r = 125 c/ w t = 25 c a ja 0.001 0.01 0.1 100 10 1 1000 single pulse maximum power dissipation -1 t ,time (sec) tr ansi ent ther mal response cur ve r( t ),normalized effective tr ansi en t th er mal resi st ance 10 0.001 -4 0.01 0.02 10 -3 10 -2 10 si n g l e pu l s e 0.01 dut y cycl e = 0.5 0.1 0.1 0.05 0.2 1 p ja 4.r (t)=r(t) + r 3.t - t = p * r (t ) ja 2.r =125 c/ w 1.dut y cycle,d = dm 1 1 10 j 1000 100 t1 t2 ja ja a t2 t1 not es :
cystech electronics corp. spec. no. : c396q8 issued date : 2009.04.29 revised date : page no. : 6/6 MTB20N03Q8 cystek product specification sop-8 dimension *: typical inches millimeters inches millimeters 8-lead sop-8 plastic package cystek packa g e code: q8 marking: top view a b front view f c d e g part a i h j k o m l n right side view part a date code device name dim min. max. min. max. dim min. max. min. max. a 0.1909 0.2007 4.85 5.10 i 0.0019 0.0078 0.05 0.20 b 0.1515 0.1555 3.85 3.95 j 0.0118 0.0275 0.30 0.70 c 0.2283 0.2441 5.80 6.20 k 0.0074 0.0098 0.19 0.25 d 0.0480 0.0519 1.22 1.32 l 0.0145 0.0204 0.37 0.52 e 0.0145 0.0185 0.37 0.47 m 0.0118 0.0197 0.30 0.50 f 0.1472 0.1527 3.74 3.88 n 0.0031 0.0051 0.08 0.13 g 0.0570 0.0649 1.45 1.65 o 0.0000 0.0059 0.00 0.15 h 0.1889 0.2007 4.80 5.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: 42 alloy; solder plating ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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